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auirfr6215 hexfet ? power mosfet pd-96302 specifically designed for automotive applications of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. description features o p-channel o low on-resistance o dynamic dv/dt rating o 175c operating temperature o fast switching o fully avalanche rated o repetitive avalanche allowed up to tjmax o lead-free, rohs compliant o automotive qualified * s d g d-pak auirfr6215 s d g d automotive grade v (br)dss -150v r ds(on) max. 0.295 i d -13a 1 gds gate drain source absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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"! parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.4 r ja junction-to-ambient(pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 max. -13 -9.0 -44 110 5.0 -55 to + 175 20 0.71 300 310 a c -6.6 11 www.kersemi.com
auirfr6215 2 s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -150 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.20 ??? v/c ??? ??? 0.295 ??? ??? 0.58 v gs(th) gate threshold voltage -2.0 ??? -4.0 v gfs forward transconductance 3.6 ??? ??? s i dss drain-to-source leakage current ??? ??? -25 ??? ??? -250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 66 q gs gate-to-source charge ??? ??? 8.1 q gd gate-to-drain ("miller") charge ??? ??? 35 t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 36 ??? t d(off) turn-off delay time ??? 53 ??? t f fall time ??? 37 ??? between lead, nh 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 860 ??? c oss output capacitance ??? 220 ??? c rss reverse transfer capacitance ??? 130 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 160 240 ns t j = 25c, i f =-6.6a q rr reverse recovery charge ??? 1.2 1.7 nc di/dt = 100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ??? 4.5 ??? ??? 7.5 ??? l d l s internal source inductance internal drain inductance v ds = -50v, i d = -6.6a i d = -6.6a v gs = 20v v gs = -20v mosfet symbol showing the v ds =-120v conditions r d = 12 ?, see fig. 10 v gs = 0v v ds = -25v ? = 1.0mhz, see fig.5 i d = -6.6a r g = 6.8 ? t j = 25c, i s =-6.6a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -6.6a v ds = v gs , i d = -250a v ds = -150v, v gs = 0v v ds = -120v, v gs = 0v, t j = 150c v gs = -10v, see fig 6 and 13 v dd = -75v a na nc ns conditions pf a ??? ??? ??? ??? -13 -44 ? v gs = -10v, i d = -6.6a t j = 150c static drain-to-source on-resistance r ds(on) www.kersemi.com
auirfr6215 3 qualification information ? d pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 aec-q101-002 human body model class h3a aec-q101-001 www.kersemi.com
auirfr6215 4 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 1 10 100 1 10 100 d ds 20s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 175c c 1 10 100 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) t = 175c j v = -50v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -11a d www.kersemi.com
auirfr6215 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 0 20406080 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 13 i = -6.6a v = -120v v = -75v v = -30v d ds ds ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10s 100s 1ms t = 25c t = 175c single pulse c j 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss www.kersemi.com
auirfr6215 6 fig 9. maximum drain current vs. case temperature fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit fig 10b. switching time waveforms * +,*
1 0.1 % * * -. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c www.kersemi.com
auirfr6215 7 fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -2.7a -4.7a bottom -6.6a d $
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%() q g q gs q gd v g charge !"* d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
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t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v www.kersemi.com
auirfr6215 8 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer , * reverse polarity of d.u.t for p-channel www.kersemi.com
auirfr6215 9

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auirfr6215 10

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch notes: repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) starting t j = 25c, l = 14mh r g = 25 ? , i as = -6.6a. (see fig.12) i sd -6.6a, di/dt -620a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2% this is applied for i-pak, l s of d-pak is measured between lead and center of die contact uses irf6215 data and test conditions when mounted on 1" square pcb (fr-4 or g-10 material ) for recommended footprint and soldering techniques refer to application note #an-994 r is measured at tj approximately 90c. www.kersemi.com

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